Sequential infiltration synthesis (SIS) significantly improves EUV patterning

his week, at the SPIE Advanced Lithography conference 2019, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, demonstrates the positive impact of sequential infiltration synthesis (SIS) on the EUVL (extreme ultra-violet lithography) patterning process. This post-lithography technique is shown to significantly reduce stochastic nano-failures and line roughness, contributing to the introduction of EUVL patterning of future nodes". This work integrates recent advancements on metrology and etch, and on material developments, which will be presented in multiple papers at this week's 2019 SPIE Advanced Lithography Conference.

Sequential infiltration synthesis (SIS) significantly improves EUV patterning

his week, at the SPIE Advanced Lithography conference 2019, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, demonstrates the positive impact of ...

Mon 25 Feb 19 from Phys.org

Sequential Infiltration Synthesis (SIS) Significantly Improves EUV Patterning, Wed 27 Feb 19 from AZoNano

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