Operation mechanism of ferroelectric HfO2-based transistor and memory has been elucidated

Ferroelectric HfO2-based transistor and memory are expected to realize ultralow power electronics; however, their operation mechanism and scalability were not clarified yet.?Physical mechanism of low voltage operation of a transistor with ferroelectric-HfO2 gate insulator has been experimentally clarified. Scalability of ferroelectric memory with HfO2 tunnel-layer down to 20nm diameter has been theoretically elucidated.?The obtained results will contribute to enabling ultralow power IoT device and thus highly sophisticated network services.

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