Assessing the promise of gallium oxide as an ultrawide bandgap semiconductor

In microelectronic devices, the bandgap is a major factor determining the electrical conductivity of the underlying materials. Substances with large bandgaps are generally insulators that do not conduct electricity well, and those with smaller bandgaps are semiconductors. A more recent class of semiconductors with ultrawide bandgaps (UWB) are capable of operating at much higher temperatures and powers than conventional small-bandgap silicon-based chips made with mature bandgap materials like silicon carbide (SiC) and gallium nitride (GaN).

Assessing the promise of gallium oxide as an ultrawide bandgap semiconductor

In microelectronic devices, the bandgap is a major factor determining the electrical conductivity of the underlying materials. Substances with large bandgaps are generally insulators that do ...

Tue 18 Dec 18 from Phys.org

Assessing the promise of gallium oxide as an ultrawide bandgap semiconductor, Tue 18 Dec 18 from ScienceDaily

Assessing the promise of gallium oxide as an ultrawide bandgap semiconductor, Tue 18 Dec 18 from Eurekalert

Development of world's first vertical gallium oxide transistor through ion implantation doping

Researchers at the National Institute of Information and Communications Technology (NICT) and Tokyo University of Agriculture and Technology (TUAT) demonstrate a vertical Ga2O3 metal-oxide-semiconductor ...

Thu 13 Dec 18 from Phys.org

Development of world's first vertical Ga2O3 transistor through ion implantation doping, Wed 12 Dec 18 from ScienceDaily

Development of world's first vertical Ga2O3 transistor through ion implantation doping, Wed 12 Dec 18 from Eurekalert

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