A technology for pressureless sinter joining for next-generation power semiconductors

Silver micron-particle sintering joining technology developed by Professor SUGANUMA Katsuaki at The Institute of Scientific and Industrial Research, Osaka University, is promising for next-generation power semiconductor, GaN. By improving silver paste, he has developed low-temperature pressureless die bonding, which can be used for all types of electrodes, including Cu and Au, as well as silver coating. These achievements have enabled low-cost, reliable heat-resistant mounting technology for die attach and for printed wiring without changing a conventional cheap electrode structure.

A technology for pressureless sinter joining for next-generation power semiconductors

Silver micron-particle sintering joining technology developed by Professor SUGANUMA Katsuaki at The Institute of Scientific and Industrial Research, Osaka University, is promising for next-generation ...

Fri 1 Sep 17 from Phys.org

A technology for pressureless sinter joining for next-generation power semiconductors, Fri 1 Sep 17 from AlphaGalileo

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