Researchers create magnetic RAM

A team of researchers has now developed a magnetoelectric random access memory (MELRAM) cell, which consists of two components: piezoelectric material and a layered structure characterized by a high magnetoelasticity. When a voltage is applied to the memory cell, the piezoelectric layer of the structure is deformed. Depending on the nature of the strain, magnetization assumes a particular orientation, storing information. The changing orientation of the magnetic field gives rise to increased voltage in the sample.

Researchers create magnetic RAM

MIPT researchers teamed up with collaborators for a successful demonstration of magnetoelectric random access memory (MELRAM). A transition to magnetoelectric memory could enable substantial ...

Wed 23 Aug 17 from

Researchers create magnetic RAM, Tue 22 Aug 17 from Eurekalert

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