SOI wafers are suitable substrates for gallium nitride crystals

In cooperation with Okmetic Oy and the Polish ITME, researchers at Aalto University have studied the application of SOI (Silicon On Insulator) wafers, which are used as a platform for manufacturing different microelectronics components, as a substrate for producing gallium nitride crystals. The researchers compared the characteristics of gallium nitride (GaN) layers grown on SOI wafers to those grown on silicon substrates more commonly used for the process. In addition to high-performance silicon wafers, Okmetic also manufactures SOI wafers, in which a layer of silicon dioxide insulator is sandwiched between two silicon layers. The objective of the SOI technology is to improve the capacitive and insulating characteristics of the wafer.

SOI wafers are suitable substrates for gallium nitride crystals

In cooperation with Okmetic Oy and the Polish ITME, researchers at Aalto University have studied the application of SOI (Silicon On Insulator) wafers, which are used as a platform for manufacturing ...

Thu 2 Mar 17 from Phys.org

A SOI wafer is a suitable substrate for gallium nitride crystals

Improved characteristics in power electronics and radio applications can be achieved by using a SOI wafer for gallium nitride growth.

Thu 2 Mar 17 from ScienceDaily

A SOI wafer is a suitable substrate for gallium nitride crystals, Thu 2 Mar 17 from Eurekalert

A SOI wafer is a suitable substrate for gallium nitride crystals, Thu 2 Mar 17 from AlphaGalileo

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